| PART |
Description |
Maker |
| 5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| KDR393 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| KDR393S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| Q62702-D1288 BAT15-020S BAT15-050S BAT15-090S BAT1 |
RESISTOR,SMD1206,1.1K,1/4W,5% SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KDR368 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| NSR01L30NXT5G10 NSR01L30 |
30 V, 100 mA, Low IR Schottky Diode, DSN2 (0201)
Schottky Barrier Diode
|
ON Semiconductor
|
| NSR02L30NXT5G10 NSR02L30 |
30 V 200 mA Low IR Schottky Diode, DSN2 (0201)
Schottky Barrier Diode
|
ON Semiconductor
|
| BAT14-03 BAT14-03W Q62702-A1103 BAT1403W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RB521S30T1 RB521S30T1_D RB521S30T5 D RB521S30T1/D |
Low VF Small Signal Schottky Diode
Schottky Barrier Diode
|
ONSEMI[ON Semiconductor]
|
| KDR720S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
